FQD2N80TM N Ch MOSFET VDSS Drain Source Voltage SMD SMT Mounting

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name : ON

Model Number : FQD2N80TM

Place of Origin : ON

MOQ : 1

Price : Can discuss

Payment Terms : T/T

Supply Ability : 3000

Packaging Details : The cartons

Manufacturer : onsemi

Product Category : MOSFET

Technology : Si

Mounting Style : SMD/SMT

Package / Case : DPAK-3

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 800 V

Id - CoId - Continuous Drain Currentrriente de drenaje continua : 1.8 A

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Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	1.8 A
Rds On - Drain-Source Resistance:	6.3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	2.4 S
Height:	2.39 mm
Length:	6.73 mm
Product Type:	MOSFET
Rise Time:	30 ns
Series:	FQD2N80
	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	12 ns
Width:	6.22 mm
Unit Weight:	0.011640 oz

FQD2N80TM N Ch MOSFET